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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION *High Collector Current:: IC= 5A *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A *Wide Area of Safe Operation *Complement to Type 2SB1291 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 60 60 5 5 10 40 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1720 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50A; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50A; IC= 0 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V A A Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE Classifications E 100-200 F 160-320 w ww scs .i VEB= 4V; IC= 0 IC= 1A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz .cn mi e 100 10 10 320 130 pF IE= -0.5A; VCE= 5V 8 MHz isc Websitewww.iscsemi.cn 2 |
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